ISSN 1004-4140
CN 11-3017/P
| Citation: |
HU W T, LAO H, QIU A, et al. Advance in Silicon Photomultiplier for All-Digital Positron Emission Tomography[J]. CT Theory and Applications, 2024, 33(4): 421-432. DOI: 10.15953/j.ctta.2024.015. (in Chinese).
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In recent years, silicon photomultipliers (SiPMs) have emerged as preferred photoelectric conversion devices in positron emission tomography (PET) due to their outstanding performance. SiPMs possess single-photon resolution capability and time resolution below 100 ps, enabling precise photon arrival time measurements. These advances paved the way for emerging applications such as time-of-flight PET (TOF-PET), photon counting CT, and positron emission lifetime imaging, presenting new challenges to SiPM performance, the advancing of which to their physical limits has become a key focus area in next-generation SiPM research. In traditional SiPM architectures, signal processing and analog-to-digital conversion introduce noise and degrade time performance, thereby limiting the full SiPM potential. With the recent and rapid development of semiconductor manufacturing processes, SiPMs could be manufactured on standard CMOS process nodes, which marks a significant breakthrough in the SiPM field, allowing for the integration of digital logic within SiPM devices. This advancement opens the possibility of achieving more precise time, energy, and position information within a single SiPM, thereby providing potential possibilities to push SiPMs to their performance limits. In this study, we reviewed the development history, working principles, and performance parameters of SiPMs. We analyzed the limitations of traditional SiPMs, outlined key aspects of digital SiPM research, and introduced various current digital SiPM architectures. Finally, we summarized and anticipated key technologies in digital SiPMs.
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